A3V56S30ETP View Datasheet(PDF) - Unspecified

Part Name

Description

Manufacturer

A3V56S30ETP

256M Single Data Rate Synchronous DRAM

Unspecified 

A3V56S30ETP

A3V56S40ETP

256M Single Data Rate Synchronous DRAM

Command Intervals

Read command to Read command interval

1. Same bank, same ROW address: When another read command is executed at the same ROW address of the same bank

as the preceding read command execution, the second read can be performed after an interval of no less than 1 clock.

Even when the first command is a burst read that is not yet finished, the data read by the second command will be valid.

2. Same bank, different ROW address: When the ROW address changes on same bank, consecutive read commands

cannot be executed; it is necessary to separate the two read commands with a precharge command and a bank active

command.

3. Different bank: When the bank changes, the second read can be performed after an interval of no less than 1 clock,

provided that the other bank is in the bank active state. Even when the first command is a burst read that is not yet finished,

the data read by the second command will be valid.

Revision 2.2

Page 20/39

Mar., 2009

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