2SD882 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Part Name
Description
Manufacturer
2SD882 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 -3L Plastic-Encapsulate Transistors
2SD882 TRANSISTOR (NPN)
TO-220 -3L
FEATURES
Power Dissipation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
40
V
30
V
6
V
3
A
2
W
150
℃
-55-150
℃
1 .EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS ( Ta=25℃ u n le s s o t h e r w is e s p e c if ie d )
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO IC = 100μA, IE=0
40
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE= 100μA, IC=0
6
Collector cut-off current
ICBO
VCB= 40 V, IE=0
Collector cut-off current
ICEO
VCE= 30 V, IB=0
Emitter cut-off current
IEBO
VEB= 6 V, IC=0
DC current gain
hFE
VCE= 2 V, IC= 1A
60
Collector-emitter saturation voltage
VCE (sat)
IC= 2A, IB= 0.2 A
Base-emitter saturation voltage
Transition frequency
VBE (sat)
fT
IC= 2A, IB= 0.2 A
VCE= 5V, IC=0.1A
f =10MHz
Typ Max
Unit
V
V
V
1
µA
10
µA
1
µA
400
0.5
V
1.5
V
90
MHz
CLASSIFICATION OF hFE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
www.cj-elec.com
1
B,Aug,2016
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