ESDALC6V1W5(2002) View Datasheet(PDF) - STMicroelectronics
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ESDALC6V1W5 Datasheet PDF : 9 Pages
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ESDALC6V1W5
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
Ppp[Tj initial] / Ppp [Tj initial = 25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj(°C)
0.0
0
25
50
75
100
125
150
175
Fig. 2: Peak pulse power versus exponential pulse
duration.
Ppp(W)
100
Tj initial = 25°C
10
1
tp(µs)
10
100
Fig. 3: Junction capacitance versus reverse voltage
applied (typical values).
Fig. 4: Clamping voltage versus peak pulse cur-
rent (maximum values, rectangular waveform).
C(pF)
14
12
10
8
6
4
2
0
0
1
VR(V)
2
3
F=1MHz
Vosc =30mVRMS
Tj=25°C
Ipp(A)
100.0
10.0
1.0
Vcl(V)
tp=2.5µs
Tj initial =25°C
0.1
4
5
0
10
20
30
40
50
60
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
IR [Tj] / IR [Tj=25°C]
100
10
Fig. 6: Application example
I/02
I/01
I/04
I/03
IC
to be
protected
Tj(°C)
1
25
50
75
100
125
3/9
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