BTS112 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BTS112

TEMPFET®

Siemens AG 

Drain-source on-state resistance

RDS(on) = f (Tj)

Parameter: ID = 5 A, VGS = 10 V

BTS 112A

Gate threshold voltage VGS(th) = f (Tj)

Parameter: VDS = VGS, ID = 1 mA

Typ. transfer characteristic

ID = f (VGS)

Parameter: tp = 80 µs, VDS = 25 V

Typ. transconductance gfs = f (ID)

Parameter: tp = 80 µs, VDS = 25 V

Semiconductor Group

6

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