BF370 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name

Description

Manufacturer

BF370

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

BF370 TRANSISTOR (NPN)

FEATURES

z Low Saturation Medium Current Application

z High Transition Frequency

TO – 92

1.COLLECTOR

2. BASE

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

40

15

4.5

0.1

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

Test conditions

Min Typ Max Unit

V(BR)CBO IC= 0.1mA,IE=0

40

V

V(BR)CEO IC=1mA,IB=0

15

V

V(BR)EBO IE=100μA,IC=0

4.5

V

ICBO

VCB=20V,IE=0

0.4

μA

IEBO

VEB=2V,IC=0

0.1

μA

hFE

VCE=1V, IC=10mA

40

200

VCE(sat)

IC=15mA,IB=1.5mA

0.2

V

VBE(sat)

IC=15mA,IB=1.5mA

1.2

V

fT

VCE=10V,IC= 10mA,f=100 MHz 500

MHz

www.cj-elec.com

1

C,Dec,2015

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