Characteristic
Symbol
Min
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) – continued
Peak Reverse Recovery Current
(IF = IFmax, V = 600 V, RG as specified)
Irrm
5A120
—
10A120
—
15A120
—
Diode Stored Charge
(IF = IFmax, V = 600 V, RG as specified)
Qrr
5A120
—
10A120
—
15A120
—
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C)
Characteristic
Symbol
Min
Turn–On Delay Time
td(on)
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
5A120
—
10A120
—
15A120
—
Rise Time
tr
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
5A120
—
10A120
—
15A120
—
Turn–Off Delay Time
td(off)
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
—
Fall Time
tf
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
—
Turn–On Energy
E(on)
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
5A120
—
10A120
—
15A120
—
Turn–Off Energy
E(off)
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
5A120
—
10A120
—
15A120
—
Diode Reverse Recovery Time
trr
(IF = IFmax, V = 600 V, RG as specified)
5A120
—
10A120
—
15A120
—
Peak Reverse Recovery Current
Irrm
(IF = IFmax, V = 600 V, RG as specified)
5A120
—
10A120
—
15A120
—
Diode Stored Charge
Qrr
(IF = IFmax, V = 600 V, RG as specified)
5A120
—
10A120
—
15A120
—
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance — IGBT
5A120
RqJC
—
10A120
—
15A120
—
Thermal Resistance — Free–Wheeling Diode
5A120
RqJC
—
10A120
—
15A120
—
Typ
5.0
6.0
9.6
335
575
860
Typ
230
315
375
130
220
235
176
676
1.3
3.9
5.5
0.711
1.290
1.939
190
375
310
8.4
10
15
825
2100
2500
2.30
1.54
1.21
5.28
2.61
2.61
Max
Unit
A
—
—
—
nC
—
—
—
Max
Unit
ns
—
—
—
ns
—
—
—
ns
—
ns
—
mJ
—
—
—
mJ
—
—
—
ns
—
—
—
A
—
—
—
nC
—
—
—
2.88
°C/W
1.92
1.52
6.60
°C/W
3.26
3.26
MOTOROLA
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
3