FM1608B View Datasheet(PDF) - Cypress Semiconductor

Part Name

Description

Manufacturer

FM1608B

64-Kbit (8 K × 8) Bytewide F-RAM Memory

Cypress Semiconductor 

AC Switching Characteristics (continued)

Over the Operating Range

Parameters [2]

Cypress

Parameter

Alt Parameter

SRAM Write Cycle

tWC

tCA

tCW

tPC

tWP

tAS

tAH

tDS

tDH

tWZ[5, 6]

tWX[6]

tHZ[5]

tWS[7]

tWH[7]

tWC

–

tSCE

–

tPWE

tSA

tHA

tSD

tHD

tHZWE

–

–

–

–

Description

Write cycle time

Chip enable active time

Chip enable to write enable HIGH

Pre-charge time

Write enable pulse width

Address setup time

Address hold time

Data input setup time

Data input hold time

Write enable LOW to output HI-Z

Write enable HIGH to output driven

Chip enable to output HI-Z

Write enable to CE LOW setup time

Write enable to CE HIGH hold time

FM1608B

Min

Max

Unit

130

–

ns

70

–

ns

70

–

ns

60

–

ns

40

–

ns

0

–

ns

15

–

ns

30

–

ns

0

–

ns

–

15

ns

10

–

ns

–

15

ns

0

–

ns

0

–

ns

Notes

5. tWZ and tHZ is specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.

6. This parameter is characterized but not 100% tested.

7. The relationship between CE and WE determines if a CE or WE controlled write occurs. There is no timing specification associated with this relationship.

Document Number: 001-86211 Rev. *C

Page 10 of 18

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