KMZ11B1 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
KMZ11B1 Datasheet PDF : 8 Pages
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Philips Semiconductors
Magnetic field sensor
Preliminary specification
KMZ11B1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
155
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C; Hx = 3 kA/m, note 1; VCC = 5 V unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCC
bridge supply voltage
−
Hy
magnetic field strength
−2
S
sensitivity
open circuit
3.2
TCVO
temperature coefficient of
output voltage
Rbridge
TCRbridge
Voffset
TCVoffset
bridge resistance
temperature coefficient of
bridge resistance
offset voltage
offset voltage drift
VCC = 5 V;
Tamb = −25 to +125 °C
ICC = 3 mA;
Tamb = −25 to +125 °C
Tbridge = −25 to +125 °C
Tbridge = −25 to +125 °C
FL
linearity deviation of output Hy = 0 to ±1 kA/m
voltage
Hy = 0 to ±1.6 kA/m
Hy = 0 to ±2 kA/m
FH
hysteresis of output voltage
f
operating frequency
−
−
1.9
−
−1.5
−3
−
−
−
−
0
TYP.
5
−
−
−0.4
−0.1
−
0.3
−
−
−
−
−
−
−
MAX.
−
+2
4.8
−
UNIT
V
kA/m
m-k---A--V----⁄-⁄--m-V--
%/K
−
%/K
2.9
kΩ
−
%/K
+1.5
mV/V
+3
µ----V--K----⁄--V---
±0.5
%⋅FS
±1.7
%⋅FS
±4
%⋅FS
1
%⋅FS
1
MHz
Note
1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field
Hx = 3 kA/m.
1996 Dec 11
4
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