DCR1376SBA View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR1376SBA Datasheet PDF : 8 Pages
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DCR1376SBA
10000
Conditions:
Tj = 125˚C
IT = 800A
VR = 100V
tp = 3ms - Trapezoidal
100
Table gives pulse power PGM in Watts
Pulse width
µs
100
200
500
1ms
10ms
Pulse frequency Hz
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20
-
-
10
1000
100
0.1
IT
QS
dI/dt
IRR
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
0.1
Anode side cooled
0.01
Double side cooled
1
Upper limit 95%
VGD
0.1
0.001
Lower limit 5% Region of certain
triggering
0.01
0.1
1
Gate trigger current, IGT - (A)
10
IFGM
Fig.5 Gate characteristics
40
I2t = Î2 x t
2
30
20
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0130
0.0141
0.0170
0.0200
Anode side
0.0210
0.0221
0.0250
0.0280
0.1
1
Time - (s)
10
100
Fig.6 Transient thermal impedance - junction to case
2.0
I2t
1.5
10
1.0
0.5
0
0
1
10 1 2 3 45 10 20 30 50
ms
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRSM at Tcase = 125˚C)
6/8
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