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Part Name
Description
BY269 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
BY269
Fast Avalanche Sinterglass Diode
New Jersey Semiconductor
BY269 Datasheet PDF : 2 Pages
1
2
BY268.BY269
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.4 A
Reverse current
V
R
= 1400V
V
R
= 1600V
V
R
= 1400V, Tj = 100 °C
V
R
=
1600 V,Tj
= 100 °C
Reverse recovery time
IP = 0.5 A, I
R
= 1 A, i
R
=
0.25
A
Subtype Symbol
Min
Typ.
Max
Unit
VF
1.25
V
BY268
IR
1
2
HA
BY269
IR
1
2
HA
BY268
IR
15
HA
BY269
IH
15
^A
'rr
400
ns
Package Dimensions in mm
C'athcuic
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