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BYW100-200(2001) View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
BYW100-200
(Rev.:2001)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BYW100-200 Datasheet PDF : 5 Pages
1 2 3 4 5
BYW100-200
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient*
* On infinite heatsink with 10mm lead length.
Parameter
Value
45
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR * Reverse leakage current Tj = 25°C
VR = VRRM
10
µA
Tj = 100°C
0.5 mA
VF ** Forward voltage drop
ct(s) Pulse test : * tp = 5 ms, δ < 2 %
u ** tp = 380 µs, δ < 2 %
Tj = 25°C
Tj = 100°C
IF = 4.5A
IF = 1.5A
Prod To evaluate the maximum conduction losses use the following equation :
P = 0.75 x IF(AV) + 0.075 x IF2(RMS)
1.2
0.78 0.85
olete RECOVERY CHARACTERISTICS
bs Symbol
- O trr
t(s) tfr
uc VFP
Obsolete Prod Qrr
Tests conditions
IF = 1A dIF/dt = - 50A/µs VR = 30V Tj = 25°C
IF = 1.5A dIF/dt = - 50A/µs
Measured at 1.1 x VFmax
Tj = 25°C
IF = 1.5A dIF/dt = - 50A/µs
Tj = 25°C
IF = 1.5A dIF/dt = - 20A/µs VR 30V Tj = 25°C
Min.
Typ.
30
Max.
35
5
10
V
Unit
ns
ns
V
nC
2/5

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