DCR806SG View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR806SG

Phase Control Thyristor

Dynex Semiconductor 

DCR806SG

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) on-state current

TSM

I2t

I2t for fusing

ITSM

Surge (non-repetitive) on-state current

I2t

I2t for fusing

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Thermal resistance - junction to case

R

th(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

T

Storage temperature range

stg

-

Clamping force

Conditions

10ms half sine; T = 125oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase = 125oC

VR = 0

Max. Units

9.0

kA

405 x 103 A2s

11.25

kA

633 x 103 A2s

Conditions

Double side cooled

dc

Single side cooled

Clamping force 12.5kN

with mounting compound

Anode dc

Cathode dc

Double side

Single side

On-state (conducting)

Reverse (blocking)

Min. Max. Units

- 0.032 oC/W

- 0.064 oC/W

- 0.064 oC/W

- 0.008 oC/W

- 0.016 oC/W

-

135

oC

-

125

oC

-55 125

oC

11.0 13.0 kN

3/8

www.dynexsemi.com

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