DCR806SG View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR806SG

Phase Control Thyristor

Dynex Semiconductor 

DCR806SG

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

I /I

RRM DRM

dV/dt

dI/dt

VT(TO)

rT

t

gd

tq

IL

IH

Peak reverse and off-state current

At V /V , T = 125oC

-

RRM DRM case

Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Gate open circuit.

-

Rate of rise of on-state current

From 67% VDRM to 1500A Repetitive 50Hz -

Gate source 1.5A

tr = 0.5µs, Tj = 125oC

Non-repetitive -

Threshold voltage

At T = 125oC

-

vj

On-state slope resistance

Delay time

Turn-off time

At Tvj = 125oC

-

VD = 67% VDRM, Gate source 30V, 15Ω

t

r

=

0.5µs,

T

j

=

25oC

-

I

T

=

500A,

tp

=

1ms,

Tj

=

125˚C,

VR = 50V, dIRR/dt = 20A/µs,

300

VDR = 67% VDRM, dVDR/dt = 20V/µs linear

Latching current

Tj = 25oC, VD = 5V

550

Holding current

Tj = 25oC, VD = 5V

60

50 mA

1000 V/µs

300 A/µs

500 A/µs

0.91 V

0.65 mΩ

1.5

µs

500 µs

1000 mA

100 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Conditions

VGT

IGT

VGD

VFGM

VFGN

V

RGM

I

FGM

PGM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

VDRM = 5V, Tcase = 25oC

VDRM = 5V, Tcase = 25oC

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

3.5

V

200 mA

0.25 V

30

V

0.25 V

5

V

10

A

150 W

10

W

4/8

www.dynexsemi.com

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