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DCR806SG View Datasheet(PDF) - Dynex Semiconductor

Part Name
Description
Manufacturer
DCR806SG
Dynex
Dynex Semiconductor Dynex
DCR806SG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
DCR806SG
CURVES
2500
Measured under pulse
conditions
2000
1500
1000
500
1: Tj = 125˚C Min
2: Tj = 125˚C Max
1
2
3000
2500
2000
1500
1000
500
0
0
0.5
1.0
1.5
2.0
2.5
0
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
VTM Equation:-
VTM = A + Bln (IT) + C.IT+D.IT
Where A = 0.6102629
B = 0.08049203
C = 7.189037 x 104
D = 0.01028328
these values are valid for Tj = 125˚C for IT 500A to 2500A
D.C.
Half wave
3 Phase
6 Phase
500
1000
1500
Mean current, IT(AV) - (A)
2000
Fig.3 Dissipation curves
5/8
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