DCR806SG View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR806SG

Phase Control Thyristor

Dynex Semiconductor 

DCR806SG

10000

IT

QS

dI/dt

IRR

IT = 1250A

IT = 500A

Max. value

100

Pulse width Frequency Hz Table gives pulse power PGM in Watts

µs 50 100 400

100 150 150 150

200 150 150 125

500 150 150 100

1ms 150 100 25

10ms 20 - -

10

1000

IT = 1250A

IT = 500A

Min. value

100

0.1

Conditions:

QS is total integral stored charge

Tj = 125˚C

1.0

10

100

Rate of decay of on-state current dI/dt - (A/µs)

Fig.4 Stored charge

Upper limit 99%

1

VGD

Lower limit 99%

Region of certain

triggering

0.1

0.001

0.01

0.1

1

Gate trigger current, IGT - (A)

10

IFGM

Fig.5 Gate characteristics

0.1

25

Anode side cooled

20

I2t = Î2 x t

2

Double side cooled

15

400

0.01

10

350

I2t

0.001

0.001

0.01

Conduction Effective thermal resistance

Junction to case ˚C/W

Double side

d.c.

0.032

Halfwave

0.034

3 phase 120˚ 0.044

6 phase 60˚ 0.057

Anode side

0.064

0.066

0.076

0.089

0.1

1.0

10

Time - (s)

Fig.6 Maximum (limit) transient thermal impedance -

junction to case

5

300

0

250

1

10 1 2 3 4 5 10 20 30 50

ms

Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% VRRM at Tcase 125˚C)

6/8

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