C1567 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
C1567 Datasheet PDF : 2 Pages
| |||
Jbzmi-CondiLcto'i t-Producti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN PowerTransistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC1567
DESCRIPTION
• Collector-Emitter Breakdown Voltage •-.
: V(BR)CEO= 100V(Min)
• Good Linearity of hFE
• Complement to Type 2SA794
APPLICATIONS
• Designed for low-frequency high power driver.
• Optimum for the driver stage of low-frequency and 40W
to 100W output amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25-C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
0.5
A
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ Ta=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
1
A
1.2
W
150
r
-40-150
•c
•
123
^
PIN 1. EMITTER
2. COLLECTOR
3. BASE
, TO-126 package
K~B^ L-F
r~ i A
•i r
Q
& ii• —»
T
i;
c ~*1
t
A
11 rH -
V
D-»
r-j
K ~*
*-R
—* G -t—
—i •<—•»-
G• )2 3
mm
DIM MtN MAX
A 10JO 10.95
B 7JO 7,90
C 2.60 280
D 0.66 0,36
F 3.10 3.30
G 4.4S 4.68
H 2.00 2,20
J 1.35 1.55
K 15.30 H6.M
0 3JO 3,90
R 0.40 0.60
V 1.17 1.37
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and packagedimensions \vithout
noiiee. liiKormation furnished by N,l Semi-Conductors is believed to he holh accurate and reliable til Iht' time ot'miii
lo press. I lo\\c\er. N.I Semi-Coiuluctors assumes no responsibility lor anv errors or omissions discovered in its use.
N.I Seini-Conduclors encourages customers lo \crily that datasheets are cimvnl beloiv placing orders.
Qualily Semi-Conductors
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