C1567 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

C1567

Silicon NPN PowerTransistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage . lc= 0.1mA; IB= 0

V(BR)EBO Emitter-Base Breakdown Vltage

!E=1u A;lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= 500mA; IB= 50mA

VsE(sat) Base-Emitter Saturation Voltage

lc= 500mA; IB= 50mA

hpE-1 DC Current Gain

lc=1 50mA; VCE= 10V

hFE-2

DC Current Gain

lc= 500mA; VCE= 5V

fr

Current-Gain—Bandwidth Product

IE= -50mA ;VCB= 10V

COB

Output Capacitance

lE=0;VcB=10V,ftest=1MHz

• hFE1 Classifications

Q

R

S

90-155 130-220 185-330

2SC1567

MIN TYP. MAX UNIT

100

V

5

V

0.4

V

1.2

V

90

330

50

120

MHz

11

PF

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