M29W641D View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

M29W641D

64 Mbit (4Mb x16, Uniform Block) 3V Supply Flash Memory

STMicroelectronics 

M29W641DH, M29W641DL, M29W641DU

Table 3. Commands

Bus Write Operations

Command

1st

2nd

3rd

4th

5th

6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset

1 X F0

3 555 AA 2AA 55 X F0

Auto Select

3 555 AA 2AA 55 555 90

Program

4 555 AA 2AA 55 555 A0 PA PD

Double Word Program 3 555 50 PA0 PD0 PA1 PD1

Unlock Bypass

3 555 AA 2AA 55 555 20

Unlock Bypass

Program

2 X A0 PA PD

Unlock Bypass Reset 2 X 90 X 00

Chip Erase

6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10

Block Erase

6+ 555 AA 2AA 55 555 80 555 AA 2AA 55 BA 30

Erase Suspend

1 X B0

Erase Resume

1 X 30

Read CFI Query

1 55 98

Enter Extended Block 3 555 AA 2AA 55 555 88

Exit Extended Block

4 555 AA 2AA 55 555 90 X 00

Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.

Table 4. Program, Erase Times and Program, Erase Endurance Cycles

Parameter

Min

Typ (1, 2)

Max(2)

Unit

Chip Erase

80

400(3)

s

Block Erase (32 KWords)

0.8

6(4)

s

Erase Suspend Latency Time

50(4)

µs

Program (Word)

10

200(3)

µs

Double Word Program

10

200(3)

µs

Chip Program (Word by Word)

40

200(3)

s

Chip Program (Double Word)

20

100(3)

s

Program/Erase Cycles (per Block)

100,000

cycles

Data Retention

20

years

Note: 1. Typical values measured at room temperature and nominal voltages.

2. Sampled, but not 100% tested.

3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

4. Maximum value measured at worst case conditions for both temperature and VCC.

14/42

Share Link: