30000
Eoff
10000
Eon
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
RG = 1.5Ω
TC = 25℃
TC = 125℃
100
30 60 90 120 150 180 210 240 270 300
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
1
Ω
T = 25℃
12
C
300 V
9
V = 100 V
6
CC
200 V
3
0
0
200 400 600 800 1000 1200 1400
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
1000
I MAX. (Pulsed)
C
IC MAX. (Continuous)
100
DC Operation
50us
100us
1㎳
10
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linerarly with increase
in temperature
1
0.3
1
10
100
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
1000
1000
100
10
Safe Operating Area
V = 20V, T = 100oC
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Fig 16. Turn-Off SOA Characteristics
2000
1000
100
10
Single Nonrepetitive
Pulse T ≤ 125℃
J
V = 15V
GE
R
G
=
1.5
Ω
1
0
100 200 300 400 500 600 700
Collector-Emitter Voltage, V [V]
CE
Fig 17. RBSOA Characteristics
©2001 Fairchild Semiconductor Corporation
0.5
0.1
0.01
1E-3
TC=25℃
IGBT :
1E-4
DIODE :
10-5
10-4
10-3
10-2
10-1
100
101
Rectangular Pulse Duration [sec]
Fig 18. Transient Thermal Impedance
FMBL1G300US60 Rev. A