FQP65N06 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
Manufacturer
FQP65N06 Datasheet PDF : 6 Pages
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FQP65N06
®
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VGS
ID =
=0V
250 μ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
102
101
100
10-1
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 175 oC
3. Single Pulse
100
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. I = 32.5 A
D
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
70
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
1 0 -5
s in g le p u ls e
※ Notes :
1 . Z θ J C( t ) = 1 . 0 0 ℃ /W M a x .
2 . D u t y Fa c t o r , D = t /t
12
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 4/6
http://www.thinkisemi.com/
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