TN6729A View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

TN6729A

PNP General Purpose Amplifier

Fairchild Semiconductor 

PNP General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 1.0 mA, IC = 0

VCB = 60 V, IE = 0

VEB = 5.0 V, IC = 0

80

V

80

V

5.0

V

0.1

µA

10

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 50 mA, VCE = 1.0 V

IC = 250 mA, VCE = 1.0 V

IC = 500 mA, VCE = 1.0 V

IC = 250 mA, IB = 10 mA

IC = 250 mA, IB = 25 mA

IC = 250 mA, VCE = 1.0 V

80

50

250

20

0.5

V

0.35

V

1.2

V

SMALL SIGNAL CHARACTERISTICS

hfe

Small-Signal Current Gain

Ccb

Collector-Base Capacitance

IC = 200 mA, VCE = 5.0 V,

f = 20 MHz

2.5

25

VCB = 10 V, IE = 0, f = 1.0 MHz

30

pF

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

3

NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

200

VCE = 1.0 V

150

125 °C

100

25 °C

50 - 40 °C

0

0.01 0.02

0.05 0.1

0.5

1

I C - COLLECTOR CURRENT (A)

Collector-Emitter Saturation

Voltage vs Collector Current

2

1 β = 10

25 °C

0.1

- 40 °C

125 °C

0.01

10

100

I C - COLLECTOR CURRE NT (mA)

1000

Share Link: