IRFF220 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

IRFF220

N-Channel Power MOSFET

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

One,

IRFF220

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200 — — V

VGS = OV, ID= i.omA

ABVDSS/ATj Temperature Coefficient of Breakdown — 0.25 — v/°c Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

Resistance

— — 0.80

— — 0.92

Q

VGS = 10V,lD = 2.25A®

VGS=10V, ID=3.5A®

VGS(th)

gfs

IDSS

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

2.0 — 4.0 V

1.5 — — S(0)

25

— — 250 uA

VDS = VGS. to = 2so^A

VDS> isv, IDS = 2.25A ®

VDS= i6ov, VGS=OV

VDS = i6ov

IGSS

IGSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

— — 100

— — -100 nA

VGS=OV,Tj=125°C

VGS -2ov

VGS = -2ov

Qs

Qg*

Qed

td(on)

tr

td(off)

tf

LS + LD

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ('Miller') Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Inductance

8.0 — 14.3

VGS =10V, ID =3.5A

0.9 — 3.0 nC

VDS= ioov

2.3 — 9.0

— — 40

— — 50

—

— 50

ns

VDD = loov, ID = 3.5A,

RG = 7.5Q

— — 50

7.0

nH

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

Cjss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

— 260

— 100 — PF

•— 30 —

VGS = ov, VDS = 25v

f = l.OMHz

Quality Semi-Conductors

Share Link: