CY7C197D View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C197D Datasheet PDF : 8 Pages
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PRELIMINARY
CY7C197D
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .....................................−65°C to +150°C
Ambient Temperature with
Power Applied..................................................−55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12).................................................−0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State[2] ....................................... −0.5V to VCC + 0.5V
Electrical Characteristics Over the Operating Range
DC Input Voltage[2].................................... −0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
−40°C to +85°C
VCC
5V ± 10%
5V ± 10%
7C197D-10
7C197D-12
Parameter
Description
Test Conditions
Min. Max. Min. Max. Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = −4.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL= 8.0 mA
0.4
0.4
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage[2]
2.0 VCC + 0.3V 2.0 VCC +0.3V V
−0.5
0.8
−0.5
0.8
V
IIX
Input Load Current
GND < VI < VCC
−1
+1
−1
+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled −1
+1
−1
+1
µA
IOS
Output Short Circuit Current[3] VCC = Max., VOUT = GND
−300
−300 mA
ICC
VCC Operating Supply Current VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
60
50
mA
ISB1
Automatic CE Power-down Max. VCC, CE > VIH, VIN > VIH or
10
Current—TTL Inputs
VIN < VIL, f = fMAX
10
mA
ISB2
Automatic CE Power-down Max. VCC, CE > VCC − 0.3V,
3
Current—CMOS Inputs
VIN > VCC − 0.3V or VIN < 0.3V
3
mA
7C197D-15
Parameter
Description
Test Conditions
Min. Max. Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = −4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL= 8.0 mA
0.4
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage[2]
2.0 VCC + 0.3V V
−0.5
0.8
V
IIX
Input Load Current
GND < VI < VCC
−1
+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
IOS
Output Short Circuit Current[3] VCC = Max., VOUT = GND
−1
+1
µA
−300 mA
ICC
VCC Operating Supply Current VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC
40
mA
ISB1
Automatic CE Power Down Max. VCC, CE > VIH, VIN > VIH or VIN < VIL, f = fMAX
Current—TTL Inputs
10
mA
ISB2
Automatic CE Power-Down Max. VCC, CE > VCC − 0.3V,
Current—CMOS Inputs
VIN > VCC − 0.3V or VIN < 0.3V
3
mA
Capacitance[4]
Parameter
Description
Test Conditions
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
Notes:
2. VIL (min.) = –2.0V and VIH(max) = VCC + 2V for pulse durations of less than 20 ns.
3. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
4. Tested initially and after any design or process changes that may affect these parameters.
Max.
8
10
Unit
pF
pF
Document #: 38-05458 Rev. *C
Page 2 of 8
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