BFR92P(2001) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BFR92P
(Rev.:2001)

NPN Silicon RF Transistor

Infineon Technologies 

BFR92P

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector-base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2.5 V, IC = 0

DC current gain

IC = 15 mA, VCE = 8 V

V(BR)CEO 15

-

-

ICES

-

-

10

ICBO

-

- 100

IEBO

-

- 100

hFE

40 100 200

Unit

V

µA

nA

µA

-

2

Aug-03-2001

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