2SB1371 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SB1371 Datasheet PDF : 2 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1371
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEo=-120V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD2064
APPLICATIONS
• Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25-Q
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
PIN 1.BASE
2,COLLECTOR
3 aUTTER
TO-2PF8 package
-H
i i,
T^
I
O I•
.-.T-..,,.^!,..::-,,.!*.',.,,,,,,,*
.,
Veto
Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
" ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25'C
PC
Collector Power Dissipation
@ Ta=25'C
Tj ' Junction Temperature
Tsig
Storage Temperature Range
-6
A
-10
A
70
W
3
150
"C
-55-150
•c
mm
DIM MiN MAX
A 20.70 21.30
B 14.70 15.30
C
4.80
5.20
D
0,90
1.10
F
3.20
3.40
H
3.70
4.30
J
O.SO
0.70
K 16.40 17.00
L
1.90
2.10
N 10.80 11.00
p
5.60
6.00
R
1.80 2.20
S
3.10
3.50
T
870 9.30
U
O.&S 0.75
N.I Semi-C (inductors reserves the right to change test conditions, parameter limits ami puckage dimen.siims without
miiiee. Informaiioii t'uniishal by N.I Semi-Conductors is believed to he hoih accurate ami reliahle at the time ol'u<iin
u> press. I Kme\er. M Seii)i-(.'oiKlaelors iissnnies no respoiisiliflilv lor any emirs or omission* Jiseovered in it.s ii>e.
V I Seini-l diulutlofs eiiemira.ues eii-,lomei-> to \erily thai J.itiislieel-, ;uv eiiiivnl helore plaeiny onler.s.
5emi-Conductors
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