2SB1371 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SB1371

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SB1371

ELECTRICAL CHARACTERISTICS

TC=25"C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcE(sat) Collector-Emitter Saturation Voltage !c= -4A; IB= -0.4A

VsE(on) Base -Emitter On Voltage

lc= -4A; VCE= -5V

ICBO

Collector Cutoff Current

Vce=-120V; lg= 0

IEBO

Emitter Cutoff Current

VEB= -3V; lc= 0

hFE-i

DC Current Gain

lc= -20mA; VCE= -5V

hpE-2

DC Current Gain

lc= -1A; VCE= -5V

hfS.3

DC Current Gain

|c= -4A; VCE= -5V

fy

Current-Gain—Bandwidth Product lc=-0.5A;VCE=-5V;f=1MHz

COB

Output Capacitance

lE=0;VCB=-10V;f= 1MHz

MIN TYP. MAX UNIT

-2.0

V

-1.8

V

-50 M A

-50 M A

1

20

60

200

20

15

MHz

150

PF

• hFE ^Classifications

Q

S

P

60-120 80-160 100-200

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