MP04HBN-16 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
MP04HBN-16 Datasheet PDF : 10 Pages
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MP04---590
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
IGT
VGD
V
FGM
VFGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
V = 5V, T = 25oC
DRM
case
At VDRM , Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max. Units
3.5
V
200 mA
0.25 V
30
V
0.25 V
5
V
10
A
150 W
10
W
CURVES
2500
Measured under
pulse conditions
2000
1500
1000
500
Tj = 125˚C Min
Tj = 125˚C Max
0
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, VT - (V)
Fig. 3 Maximum (limit) on-state characteristics
40
1.6
35
1.4
30
1.2
25
1
20
0.8
15
0.6
10
5
0
1
0.4
ITSM (VR = 0)
ITSM (VR = 50% VRRM) 0.2
I2t (VR = 0)
I2t (VR = 50% VRRM)
0
2 3 4 5 6 7 8 9 10
Pulse length, half sine wave (ms)
Fig. 4 Sub-cycle surge curves
4/10
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