BT131-600D View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BT131-600D Datasheet PDF : 12 Pages
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Philips Semiconductors
BT131 series D and E
Triacs logic level
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise stated.
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current VD = 12 V; IT = 100 mA;
see Figure 8
T2+ G+
T2+ G−
T2− G−
T2− G+
IL
latching current
VD = 12 V; IGT = 100 mA; see
Figure 10
T2+ G+
T2+ G−
T2− G−
T2− G+
IH
holding current
VD = 12 V; IGT = 100 mA; see
Figure 11
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
Dynamic characteristics
IT = 1.4 A; see Figure 9
IT = 100 mA; see Figure 7
VD = 12 V; Tj = 25 °C
VD = 400 V; Tj = 125 °C
VD = VDRM(max); Tj = 125 °C
dVcom/dt rate of change of
commutating voltage
dVD/dt rate of rise of off-state
voltage
VDM = 400 V; Tj = 125 °C;
dIcom/dt = 0.5 A/ms
VDM = 67 % of VDRM(max);
Tj = 125 °C; exponential
waveform; RGK = 1 kΩ;
see Figure 12
tgt
gate-controlled
turn-on time
ITM = 1.5 A; VD = VDRM(max);
IG = 100 mA; dIG/dt = 5 A/µs
BT131-600D
BT131-800D
Min Typ Max
BT131-600E
Unit
BT131-800E
Min Typ Max
-
-
5
-
-
10
mA
-
-
5
-
-
10
mA
-
-
5
-
-
10
mA
-
-
7
-
-
10
mA
-
-
10 -
-
15
mA
-
-
20 -
-
25
mA
-
-
10 -
-
15
mA
-
-
10 -
-
15
mA
-
1.3 10 -
1.3 10
mA
-
1.2 1.5 -
1.2 1.5 V
-
0.7 1.5 -
0.7 1.5 V
0.2 0.3 -
0.2 0.3 -
V
-
0.1 0.5 -
0.1 0.5 mA
3
-
-
5
-
-
20 -
-
50 -
-
V/µs
V/µs
-
2
-
-
2
-
µs
BT131_SER_D_E_2
Product data sheet
Rev. 02 — 17 November 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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