RPI-579N1 View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

RPI-579N1

Photointerrupter, General type

ROHM Semiconductor 

RPI-579N1

Photointerrupter, General type

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Forward current

IF

50

mA

Reverse voltage

VR

5

V

Power dissipation

PD

80

mW

Collector-emitter voltage

VCEO

30

V

Emitter-collector voltage

VECO

4.5

V

Collector current

IC

30

mA

Collector power dissipation

PC

80

mW

Operating temperature

Topr

−25 to +85

°C

Storage temperature

Tstg

−40 to +85

°C

Soldering temperture

Tsol

260 / 3 ∗

°C / s

∗ 1mm from the body bottom.

Electrical and optical characteristics (Ta=25°C)

Applications

Printers

Facsimiles

AV equipment

Features

1) Heat resistance (170°C).

2) Small gap (0.5mm) and good accuracy.

3) Quick response time.

4) Filter against visible ray is built-in.

5) Kinked forming.

Parameter

Forward voltage

Reverse current

Dark current

Peak sensitivity wavelength

Collector current

Collector-emitter saturation voltage

Rise time

Response time

Fall time

Cut-off frequency

Peak light emitting wavelength

Response time

Symbol

VF

IR

ICEO

λP

IC

VCE(sat)

tr

tf

fC

λP

Min.

−

−

−

−

0.5

−

−

−

−

−

tr tf

−

Typ.

1.3

−

−

800

−

0.1

10

10

1

950

10

Max.

1.6

10

0.5

−

−

0.5

−

−

−

−

−

Unit

V

µA

µA

nm

mA

V

µs

µs

MHz

nm

µs

IF=50mA

VR=10V

VCE=10V

VCE=5V, IF=20mA

IF=20mA, IC=0.1mA

Conditions

−

VCC=5V, IF=20mA, RL=100Ω

IF=50mA

∗ Non-coherent Infrared light emitting diode used.

VCC=5V, IC=1mA, RL=100Ω

∗ This product is not designed to be protected against electromagnetic wave.

Maximum sensitivity wavelength

λP

− 800 − nm

−

Electrical and optical characteristics curves

100

80

d

60

40

20

00

1

2

3

4

5

DISTANCE : d (mm)

Fig.1 Relative output vs. distance ( )

100

80

60

40

20

00

1

2

3

4

5

DISTANCE : d (mm)

Fig.4 Relative output vs. distance ( )

50

40

30

20

10

0

−20 0

20 40 60 80 100

AMBIENT TEMPERATURE : Ta (°C)

Fig.2 Forward current falloff

100

PD PC

80

60

40

20

0

20 0

20 40 60 80 100

AMBIENT TEMPERATURE : Ta (°C)

Fig.5 Power dissipation / collector power

dissipation vs. ambient temperature

50

−25°C

0°C

40

25°C

50°C

75°C

30

20

10

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

FORWARD VOLTAGE : VF (V)

Fig.3 Forward current vs. forward voltage

160

140

120

100

80

60

40

20

0

40 20 0 20 40 60 80 100

AMBIENT TEMPERATURE : Ta (°C)

Fig.6 Relative output vs. ambient

temperature

External dimensions (Unit : mm)

13.8

Gap

5

A

Through hole

10

2.35

2-φ 0.8

8.95

0.5

0.8

Optical

center

4-φ

0.8

+0.05

−0

A

4-0.4

(10)

(4-0.85)

2-0.45

(2.54)

14(Bottom)

2.35±0.1

6.6±0.1

Cathode

2-φ0.7±0.1

Anode

Collector

Emitter

Notes:

1. Unspecified tolerance

shall be ±0.2 .

2. Measurement in the bracket is

that of lead pin at base the mold.

3. Dimension in parenthesis are

show for reference.

4. Please be carefully not to receive

external disturbing light because

the top and back face emitter and

detector element isn't covered by case.

5

4

3

2

1

0

0

10

20

30

40

50

FORWARD CURRENT : IF (mA)

Fig.7 Collector current vs. forward current

3.0

2.0

IF=25mA

20mA

15mA

1.0

10mA

5mA

00

2

4

6

8

10

COLLECTOR-EMITTER VOLTAGE : VCE (V)

Fig.10 Output characteristics

200

tr tf

100

RL=5kΩ

50

tf tr

tr tf RL=2kΩ

20

RL=1kΩ

10

10 20 50 100 200 500 1000 2000

COLLECTOR CURRENT : Ic (µA)

Fig.8 Response time vs.

collector current

Input VCC

1000

100

10

VCE=30V

VCE=20V

VCE=10V

1

0.1

25

0

25

50

75 100

AMBIENT TEMPERATURE : Ta (°C)

Fig.9 Dark current vs. ambient

temperature

Input

Output

RL

90%

Output

td

tr

10%

tf

td : Delay time

t r : Rise time (time for output current to rise

from 10% to 90% of peak current)

t f : Fall time (time for output current to fall

from 90% to 10% of peak current)

Fig.11 Response time measurement circuit

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