IRFF110 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
IRFF110 Datasheet PDF : 2 Pages
| |||
IRFF110, IRFF111, IRFF112, IRFF113 Devices
in Diode Ratings and Characteristics
Ig
Continuous Source Current
(Bodv Diode)
(SM Pulse Source Current
(Body Diode} Q)
VSQ Diode Forward Voltage (2)
trr
Reverse Recovery Time
QRR Reverse Recovered Charge
ton
Forward Turn-on Time
IRFF110
IRFF11 1
IRFF112
IRFF113
IRFF110
IRFF111
IRFF112
IRFF113
IRFF110
IRFF111
IRFF112
IRFF113
ALL
ALL
ALL
-
-
3.5
A
-
-
3.0
A
Modified MOSFET symbol
showing the integral
reverse P-N junction rectifier.
-
-
14
A
-
-
12
A
-
-
2.5
V
Tc « 25°C. ls « 3.5A, VQS - 0V
-
-
2.0
V
T C - 2 5 ° C . I S = 3 . 0 A , V G S = OV
200
-
1.0
ns
Tj = 150°C. Ip = 3.5A,dlp/dt = 100A/,jS
J.C
Tj = 150°C. Ip = 3.5A,dlF/dt = 100A/ns
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg -t- LQ.
©Tj = 25°Cto150°C. ® Pulse Test: Pulse width* 300^s, Duty Cycle < 2%.
' Repetitive Rating: Pulse width limited
by max. junction temperature.
See Transient Thermal Impedance Curve (Fig. 5).
Share Link: 