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Part Name
Description
STP7NE10L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STP7NE10L
N - CHANNEL 100V - 0.3 Ω - 7A - TO-220 STripFET™ POWER MOSFET
STMicroelectronics
STP7NE10L Datasheet PDF : 5 Pages
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5
STP7NE10L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
t
d(on)
t
r
Parameter
Turn-on Time
Rise Time
Test Conditions
V
DD
= 50 V
R
G
= 4.7
Ω
I
D
= 2.5 A
V
GS
= 5 V
Min.
Typ.
7
17
Max.
9
22
Unit
ns
ns
Q
g
Total Gate Charge
V
DD
= 80 V I
D
= 5 A V
GS
= 5 V
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
10
14
nC
5
nC
4
nC
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD=80V
R
G
= 4.7
Ω
I
D
=5 A
V
GS
= 10 V
Min.
Typ.
8
8
19
Max.
10
12
25
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I
SD
I
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
V
SD
(
∗
) Forward On Voltage
I
SD
= 8 A V
GS
= 0
t
rr
Reverse Recovery
Time
Q
rr
Reverse Recovery
Charge
I
SD
= 5 A
V
DD
= 30 V
I
RRM
Reverse Recovery
Current
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
di/dt = 100 A/
µ
s
T
j
= 150
o
C
Min.
Typ.
Max.
7
28
Unit
A
A
1.5
V
75
ns
190
µ
C
5
A
3/5
®
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