CXD2434TQ View Datasheet(PDF) - Sony Semiconductor
Part Name
Description
Manufacturer
CXD2434TQ Datasheet PDF : 27 Pages
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CXD2434TQ
2) Phase characteristics of H1, H2, RG, XSHP, XSHD, XRS, CL, CLD and CKO
tH1
H1
0.5VDD
0.5VDD
0.5VDD
H2
tPD3
0.5VDD
tPD1
0.5VDD
tPD2
RG
0.5VDD
XSHP
XSHD
XRS
0.5VDD
tPD4
tW1
0.5VDD
tPD5
0.5VDD
0.5VDD
0.5VDD
tPD7
tPD8
tW2
tPD6
0.5VDD
0.5VDD
tPD9
CLD
tPD10
0.5VDD
0.5VDD
tW3
tW4
CL
0.5VDD
0.5VDD
tW5
CKO
0.5VDD
tPD11
0.5VDD
0.5VDD
tW5
tPD11
0.5VDD
VDD = 5.0 V, Topr = 25 °C, load capacitance of CL and CKO = 30 pF, load capacitance of CLD, XSHP, XSHD, XRS and RG = 10 pF
Symbol
Definition
Min. Typ. Max. Unit
tH1
H1 cycle
82
ns
tPD1
H2 rising delay, activated by the falling edge of H1
–5
0
5
ns
tPD2
H2 falling delay, activated by the rising edge of H1
–5
0
5
ns
tPD3
H1 rising delay, activated by the rising edge of RG
–5
0
5
ns
tPD4
XSHP falling delay, activated by the falling edge of RG
–2
4
10
ns
tPD5
H1 falling delay, activated by the rising edge of XSHP
tPD6
H1 rising delay, activated by the rising edge of XSHD
tPD7
CLD falling delay, activated by the falling edge of XSHD
–7
2
–5
2
–5
2
7
ns
7
ns
7
ns
tPD8
CLD falling delay, activated by the rising edge of XRS
17
22
27
ns
tPD9
XRS falling delay, activated by the falling edge of CLD
0
8
15
ns
tPD10
CL falling delay, activated by the rising edge of H1
–5
0
5
ns
tPD11
H1 rising (falling) delay, activated by the rising edge of CKO –5
2
7
ns
tW1
XSHP pulse width
tW2
XSHD pulse width
tW3
CLD pulse width
13
18
23
ns
15
20
25
ns
17
22
27
ns
tW4
CL pulse width
38
41
45
ns
tW5
CKO pulse width
17
20
24
ns
—6—
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