BC857BT View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BC857BT

PNP Silicon AF Transistor

Infineon Technologies 

BC857T

Electrical Characteristics at TA = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz

fT

Ccb

Ceb

h11e

BC857AT

BC857BT

- 250 - MHz

-

2.5

- pF

-

11

-

k

-

2.7

-

-

4.5

-

Open-circuit reverse voltage transf.ratio

h12e

IC = 2 mA, VCE = 5 V, f = 1 kHz

BC857AT

BC857BT

10-4

-

1.5

-

-

2

-

Short-circuit forward current transf.ratio

h21e

IC = 2 mA, VCE = 5 V, f = 1 kHz

BC857AT

BC857BT

Open-circuit output admittance

IC = 2 mA, VCE = 5 V, f = 1 kHz

h22e

BC857AT

BC857BT

-

- 200 -

- 330 -

S

-

18

-

-

30

-

3

Nov-29-2001

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