Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 1 A
VDS = 10 V, ID = 1 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Turn−on time
ton
Switching time
Fall time
tf
2SK2865
Min Typ. Max Unit
—
—
±10
μA
±30 —
—
V
—
—
100
μA
600
—
—
V
2.0
—
4.0
V
—
4.2 5.0
Ω
0.8 1.7
—
S
— 380 —
—
40
—
pF
— 120 —
—
15
—
—
25
—
ns
—
20
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
toff
Qg
Qgs
VDD ≈ 480 V, VGS = 10 V, ID = 2 A
Qgd
—
80
—
—
9
—
—
5
—
nC
—
4
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
IDRP
VDSF
trr
Qrr
Test Condition
—
t = 1 ms
t = 100 μs
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V
dIDR / dt = 100 A/μs
Min Typ. Max Unit
—
—
2
A
—
—
5
A
—
—
8
A
—
—
−1.5
V
— 1000 —
ns
—
3.5
—
μC
Marking
K2865
Part No.
(or abbreviation code)
Lot No.
Note 4
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2010-02-05