2SK1667 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SK1667

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1667

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

250

V

±30

V

7

A

28

A

7

A

50

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

voltage

V(BR)DSS 250

—

Gate to source breakdown

voltage

V(BR)GSS ±30

—

Gate to source leak current

I GSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off) 2.0

—

Static drain to source on state RDS(on) —

0.4

resistance

Forward transfer admittance |yfs|

3.0

5.0

Input capacitance

Ciss —

690

Output capacitance

Coss —

265

Reverse transfer capacitance Crss —

45

Turn-on delay time

t d(on)

—

13

Rise time

tr

—

55

Turn-off delay time

t d(off)

—

65

Fall time

tf

—

37

Body to drain diode forward VDF

—

1.0

voltage

Body to drain diode reverse trr

recovery time

—

180

Note 1. Pulse test

Max

—

—

±10

250

3.0

0.55

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 4 A, VGS = 10 V *1

ID = 4 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 4 A, VGS = 10 V,

RL = 7.5 Ω

IF = 7 A, VGS = 0

IF = 7 A, VGS = 0,

diF/dt = 100 A/µs

2

Share Link: