2SD1269 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

2SD1269

No description available.

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD1269

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.5V(Max)@ IC= 3A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V (Min)

·Good Linearity of hFE

·Complement to Type 2SB944

APPLICATIONS

·Designed for power amplification.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

130

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

8

A

35

W

2

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website：www.iscsemi.cn

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