A775 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

A775

Silicon PNP Power Transistor

New Jersey Semiconductor 

^zml-Conductoi iPioaucti, Una.,

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Silicon PNP Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SA775

DESCRIPTION

• Collector-Emitter Breakdown Voltage

:V(BR)CEO=-100V(Min)

• Good Linearity of hFE

APPLICATIONS

• Designed for general-purpose output amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25-C)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-100

V

VCEO Collector-Emitter Voltage

-100

V

VEBO Emitter-Base Voltage

-4

V

Ic

Collector Current-Continuous

Total Power Dissipation

PC

@ TC=25'C

Tj

Junction Temperature

-0.7

A

12.5

W

150

"C

Tstg

Storage Temperature Range

-55-150 "C

PIN l.BASE

2.COLLECTOR

3.BWIITTER

TO-220C package

-« B -H

yy f •* V nU

MQ ±4

¥*

A

'•

-* *S

it1 T J

*~ H

1—

K

»

M*B

H «h

f

+ [» j

-« Rh

C

i

mm

BIN WIN MAX

A 15.50 15.90

B 9.90 10.20

c 4.20 4.50

D 0.70 0.90

F 3.40 3,70

G 4.98 5.18

H 2.68 2.90

J 0.44 0,60

K 13.00 13.40

L 1.20 1.45

0 2.70 2.90

R 2.30 2.70

S 1.29 1.35

U 6.45 6.65

u 8.66 8.86

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished hy N.I Semi-Conduetors is believed to he both accurate and reliable at the time ofa2o0im: e

to press. I louever. N.I Semi-Conductors assumes no responsibility lor anv errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placina orders.

Quality Semi-Conductors

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