A775 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

A775

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)C6O Collector-Emitter Breakdown Voltage lc=-10mA,lB=0

V(BR)CBO Collector-Base Breakdown Voltage

lc=-10u A,IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

IE=-10|J A,lc=0

VcE(sat) Collector-Emitter Saturation Voltage lc= -0.5A; IB= -50mA

ICBO

Collector Cutoff Current

VGB= -100V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -4V; lc= 0

hFE

DC Current Gain

lc= -50mA; VCE= -4V

fr

Current-Gain—Bandwidth Product

lc= -50mA; VCE=-4V

2SA775

MIN TYP. MAX UNIT

-100

V

-100

V

-4

V

-1.0

V

-10 M A

-10

MA

35

200

30

MHz

Share Link: