2SA1052 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

Manufacturer

2SA1052

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1052

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Emitter current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

IE

PC

Tj

Tstg

Ratings

Unit

–30

V

–30

V

–5

V

–100

mA

100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –30 —

voltage

Collector to emitter breakdown V(BR)CEO –30 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Note: 1. The 2SA1052 is grouped by hFE as follows.

Grade

B

C

D

Mark

MB

MC

MD

hFE

100 to 200 160 to 320 250 to 500

Max Unit

—

V

—

V

—

V

–0.5 µA

–0.5 µA

500

–0.2 V

–0.75 V

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –20 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

VCE = –12 V, IC = –2 mA

See characteristic curves of 2SA1031.

2

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