KSC1623(2002) View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

KSC1623
(Rev.:2002)

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSC1623

Low Frequency Amplifier & High Frequency

OSC.

• Complement to KSA812

3

2

1 SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

60

50

5

100

200

150

-55 ~ 150

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

ICBO

IEBO

hFE

VCE (sat)

VBE (sat)

VBE (on)

fT

Cob

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

VCB=60V, IE=0

VEB=5V, IC=0

VCE=6V, IC=1mA

IC=100mA, IB=10mA

IC=100mA, IB=10mA

VCE=6V, IC=1mA

VCE=6V, IC=10mA

VCB=6V, IE=0, f=1MHz

Min. Typ.

90

200

0.15

0.86

0.55 0.62

250

3

hFE Classification

Classification

hFE

O

90 ~ 180

Y

135 ~ 270

G

200 ~ 400

Units

V

V

V

mA

mW

°C

°C

Max.

0.1

0.1

600

0.3

1.0

0.65

Units

µA

µA

V

V

V

MHz

pF

L

300 ~ 600

Marking

C1O

hFE grade

©2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002

Share Link: