TBT200S1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
TBT200S1 Datasheet PDF : 7 Pages
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ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Symbol
Parameter
VRM Stand-off voltage
IRM Leakage current at VRM
VBR Continuous reverse voltage
VBO Breakover voltage
IH Holding current
IBO Breakover current
IPP Peak pulse current
C Capacitance
THBT200S1
I
Ipp
IBO
IH
IRM
V
VRM
VBO
VBR
1 - PARAMETERS RELATED TO ONE TRISIL. (Between TIP and GND or RING and GND)
IRM @ VRM
VBR @ IR
VBO @ IBO
max.
min.
max.
min.
max.
note 1
µA
V
V
mA
V
mA
mA
10
180
200
1
290
Note 1 :
Note 2 :
Note 3 :
See reference test circuit 1 for IH, IBO and VBO parameters.
See test circuit 2.
VR = 1V, F = 1MHz.
150
800
IH
min.
note 2
mA
150
C
max.
note 3
pF
200
2 - PARAMETERS RELATED TO
TIP and RING TRISIL.
IRM @ VRM
max.
µA
V
10
180
C
max.
pF
200
3/7
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