6MBI50S-120 View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
6MBI50S-120 Datasheet PDF : 4 Pages
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6MBI50S-120
Characteristics
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
120
VGE= 20V 15V 12V
100
80
10V
60
40
20
0
0
1
2
3
4
Collector - Emitter voltage : VCE [ V ]
8V
5
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
120
Tj= 25 oC
Tj= 125 oC
100
80
60
40
20
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
20000
10000
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Cies
1000
Coes
Cres
100
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
IGBT Modules
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
120
VGE= 20V 15V 12V
100
80
10V
60
40
20
0
0
8V
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
10
8
6
4
2
0
5
1000
Ic= 100A
Ic= 50A
Ic= 25A
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25 oC
25
800
20
600
15
400
10
200
5
0
0
0
100
200
300
400
500
Gate charge : Qg [ nC ]
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