6MBI50S-120 View Datasheet(PDF) - Fuji Electric
Part Name
Description
Manufacturer
6MBI50S-120 Datasheet PDF : 4 Pages
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6MBI50S-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=24Ω,Tj=25oC
1000
500
toff
ton
tr
100
tf
50
0
20
40
60
80
Collector current : Ic [ A ]
5000
1000
500
Switching time vs. Gate resistance (typ.)
Vcc=600V,Ic=50A,VGE=±15V, Tj=25oC
ton
toff
tr
100
50
10
50
100
500
Gate resistance : Rg [ Ω ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V,Ic=50A,VGE=±15V, ,Tj=125oC
40
Eon
30
20
10
0
10
Eoff
50
100
Gate resistance : Rg [ Ω ]
Err
500
1000
500
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=24Ω,Tj=125oC
toff
ton
tr
tf
100
50
0
20
40
60
80
Collector current : Ic [ A ]
14
12
10
8
6
4
2
0
0
Switching loss vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=24Ω,Tj=125oC
Eon(125 oC)
Eon(25 oC)
Eoff(125 oC)
Eoff(25 oC)
Err(125 oC)
Err(25 oC)
20
40
60
80
100
Collector current : Ic [ A ]
Reverse bias safe operating area
+VGE=15V,-VGE=<15V, Rg=>24Ω,Tj=<125oC
120
100
80
60
40
20
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter voltage : VCE [ V ]
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