TEMT1000(2000) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
TEMT1000 Datasheet PDF : 5 Pages
| |||
TEMT1000
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown IC = 1 mA
V(BR)CE 70
V
Voltage
O
Collector Dark Current
VCE = 20 V, E = 0
ICEO
1
200 nA
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 CCEO
3
pF
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
ϕ
±15
deg
ll0p.5
850
750...980
nm
nm
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
lEe = 1 mW/cm2,
= 950 nm, IC = 0.1 mA
W VS = 5 V, IC = 5 mA,
RL = 100
W VS = 5 V, IC = 5 mA,
RL = 100
VCEsat
ton
toff
0.3
V
2.0
ms
2.3
ms
Cut–Off Frequency
W VS = 5 V, IC = 5 mA,
RL = 100
fc
180
kHz
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
l Collector Light Current Ee=1mW/cm2,
=950nm, VCE=5V
Type
Symbol Min Typ Max Unit
TEMT1000
Ica
2.0 7.0
mA
Typical Characteristics (Tamb = 25_C unless otherwise specified)
104
103
VCE=20V
102
2.0
1.8
VCE=5V
1.6
lEe=1mW/cm2
=950nm
1.4
1.2
101
100
20
40
60
80
100
94 8304
Tamb – Ambient Temperature ( °C )
Figure 1. Collector Dark Current vs.
Ambient Temperature
1.0
0.8
0.6
0
20
40
60
80 100
94 8239
Tamb – Ambient Temperature ( °C )
Figure 2. Relative Collector Current vs.
Ambient Temperature
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2 (5)
Document Number 81554
Rev. 4, 17-Feb-00
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