TEMT1000(2000) View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

TEMT1000
(Rev.:2000)

Silicon NPN Phototransistor

Vishay Semiconductors 

10

f=1MHz

8

6

4

2

0

0.1

94 8294

1

10

100

VCE – Collector Emitter Voltage ( V )

Figure 3. Collector Emitter Capacitance vs.

Collector Emitter Voltage

0° 10 20

°

°

30°

40°

1.0

0.9

50°

0.8

60°

0.7

70°

80°

94 8248

0.6 0.4 0.2

0 0.2 0.4 0.6

Figure 4. Relative Radiant Sensitivity vs.

Angular Displacement

TEMT1000

Vishay Telefunken

8

6

VCE=5V

W RL=100

l=950nm

4

toff

2

ton

0

02 4

6 8 10 12 14

94 8293

IC – Collector Current ( mA )

Figure 5. Turn On/Turn Off Time vs. Collector Current

Document Number 81554

Rev. 4, 17-Feb-00

www.vishay.de • FaxBack +1-408-970-5600

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