MB84VA2105 View Datasheet(PDF) - Fujitsu

Part Name

Description

Manufacturer

MB84VA2105

16M (× 8) FLASH MEMORY & 1M (× 8) STATIC RAM

Fujitsu 

MB84VA2104-10/MB84VA2105-10

• Write Cycle (Note 4) (CE1s control) (SRAM)

ADDRESSES

tAS

WE

tWC

tWP

tWR

tCW

CE1s

CE2s

DOUT

DIN

tCOE

Note 5

tCW

tODW

tDS

tDH

VALID DATA IN

Note 5

Notes: 2. If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the

output will remain at high impedance.

3. If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the

output will remain at high impedance.

4. If OE is HIGH during the write cycle, the outputs will remain at high impedance.

5. Because I/O signals may be in the output state at this Time, input signals of reverse

polarity must not be applied.

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