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CGD914 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
CGD914 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
CGD914; CGD914MI
handbook,4h0alfpage
CTB
(dB)
50
60
70
MCD996
48
Vo
(dBmV)
(1)
44
60
handbook, halfpage
Xmod
(dB)
70
40
80
(2)
(3)
(4)
36
90
MCD997
48
Vo
(dBmV)
(1) 44
(2)
40
(3)
(4) 36
80
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.22 Composite triple beat as a function of
frequency under flat conditions.
100
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.23 Cross modulation as a function of frequency
under flat conditions.
50
handbook, halfpage
CSO
(dB)
60
70
80
MCD998
48
(2)
(3)
Vo
(4) (dBmV)
(1) 44
40
36
handbook,4h0alfpage
CSO
(dB)
50
(2)
60
(3)
70 (4)
MCD999
48
Vo
(dBmV)
(1)
44
40
36
90
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.24 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
80
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.25 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
2001 Nov 01
10

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