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CGD914 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
CGD914 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
CGD914; CGD914MI
60
handbook, halfpage
CTB
(dB)
70
MCD980
48
Vo
(dBmV)
(1)
44
(2)
80
(3)
40
(4)
90
0
36
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.6 Composite triple beat as a function of
frequency under flat conditions.
60
handbook, halfpage
Xmod
(dB)
70
80
MCD981
48
Vo
(dBmV)
(1)
44
(2)
40
90
0
(3)
(4)
36
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.7 Cross modulation as a function of frequency
under flat conditions.
50
handbook, halfpage
CSO
(dB)
60
70
80
MCD982
48
(1)
(2)
Vo
(dBmV)
44
(3)
40
(4)
36
handbook,5h0alfpage
CSO
(dB)
(2)
60
(3)
(4)
70
80
MCD983
48
Vo
(dBmV)
(1) 44
40
36
90
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.8 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
90
0
32
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.9 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
2001 Nov 01
6

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