2SC2437 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

2SC2437

Silicon NPN Power Transistor

New Jersey Semiconductor 

Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage 'lc=50mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage lc=1mA; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 0.1mA; lc= 0

VcE(sat) Collector-Emitter Saturation Voltage lc= 7A; IB= 1 .4A

VsE(sat) Base-Emitter Saturation Voltage

lc= 7A; IB= 1 .4A

ICBO

Collector Cutoff Current

VCB= 450V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; lc= 0

HFE

DC Current Gain

lc= 3A; VCE= 4V

2SC2437

MIN TYP. MAX UNIT

400

V

450

V

7

V

1.5

V

1.2

V

1.0 mA

0.1 mA

10

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