2SC2485 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
2SC2485 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage
|c= 4A; IB= 0.4A
VBE(OH) Base-Emitter On Voltage
lc= 4A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; lc= 0
hpE-1
DC Current Gain
lc= 0.2A; VCE= 5V
hpE-2
DC Current Gain
lc= 1A; VCE= 5V • '
hpE-3
DC Current Gain
lc= 4A; VCE= 5V
fl
Current-Gain—Bandwidth Product
lc= 0.5A; VCE= 5V
• hpE-2 Classifications
R
Q
P
40-80
60-120 100-200
2SC2485
MIN TYP. MAX UNIT
100
V
2.0
V
1.8
V
50 M A
50 M A
20
40
200
20
20
MHz
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